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Standards Development
The scope of this document covers SiC-based power electronic conversion semiconductor (PECS) devices as SiC MOSFETs and Diodes.
This document provides stress procedures, general failure criteria and documentation guidelines such that the dv/dt robustness can be demonstrated, evaluated and documented. This document gives examples for test setups which can be used and the corresponding test conditions.
Additionally, criteria are explained under which device manufacturers can select an appropriate test setup.
Furthermore, for the evaluation the test setups are usually used under normal laboratory conditions. The usage of the test setups is not limited to specific environmental conditions like high humidity for instance. But it would have been taken to into account that additional failure modes like corrosion might be initiated.
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