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New Work Item Proposal - 47F-582 ED1: Semiconductor devices – Micro- electromechanical devices – Part 70 :Double Cantilever Beam Test with Compliance Measurement for MEMS Hybrid Bonding Interface Characterization

Source:
IEC
Committee:
EPL/47 - Semiconductors
Categories:
Information management | Standardization. General rules
Comment period start date:
Comment period end date:

Comment by:

Scope

This part of IEC 62047 specifies a double cantilever beam test method for evaluating the interfacial fracture toughness of wafer-to-wafer hybrid bonding structures for MEMS applications.

The method uses cyclic unloading–reloading and compliance measurement to determine crack propagation without requiring direct optical measurement of the crack front. It covers specimen preparation, starter delamination, test environment, loading procedure, compliance evaluation, crack- length determination and test reporting.

Purpose

Hybrid bonding is increasingly used for high-density integration in MEMS and advanced semiconductor devices. Reliable evaluation of the bonding interface is therefore important for process development and reliability assessment.

Existing wafer-bond strength methods can require direct observation of crack propagation, which may be difficult for hybrid bonding structures containing opaque metal regions or when testing is performed in an environmental chamber.

This proposal provides a compliance-based double cantilever beam method using cyclic unloading – reloading to enable more reproducible and comparable evaluation of hybrid bonding interfaces. It also specifies controlled low-moisture test conditions to reduce environmental effects on the measured results.

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