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Standards Development
This part of IEC 63068 provides a procedure for identifying and evaluating defects in as -grown 4H- SiC (Silicon Carbide) homoepitaxial wafer by systematically combining three test methods of optical inspection, photoluminescence (PL) and X-ray topography (XRT). Additionally, this document exemplifies images of optical inspection, PL and XRT to enable the detection and categorization of defects in SiC homoepitaxial wafers.
Silicon carbide (SiC) is expected as a promising semiconductor substrate for next -generation high- power devices. However, there are many defects in commonly available SiC epitaxial wafers, and they degrade a device reliability. Therefore, it is strongly n eeded to standardize recognition procedure of defects on SiC epitaxial wafer. The purpose of this standard is to provide a procedure in use of a combined method by optical inspection, photoluminescence and X -ray topography for detecting as-grown defects in commercially available 4H-SiC homoepitaxial wafers. In addition, this standard deeply related with reliability for SiC high -power devices, proposing to IEC / TC 47 / WG 5 focused on wafer level reliability for semiconductor devices.
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