If you have difficulty in submitting comments on draft standards you can use a commenting template and email it to admin.start@bsigroup.com. The commenting template can be found here.

BS EN IEC 63550-6 BS EN 63550-6 ED1 Semiconductor devices - Neuromorphic devices. Evaluation method of basic characteristics in one transistor one memristor (1T1M) arrays

Source:
IEC
Committee:
EPL/47 - Semiconductors
Categories:
Semiconductor devices
Comment period start date:
Comment period end date:
Number of comments:
0

Comment by:

Scope

This part of IEC 63550 specifies the test methods for evaluating the basic characteristics of the one transistor one memristor (1T1M) arrays. The test methods in this document include parallel read, parallel write, the precision and efficiency metrics of basic operations such as read noise, writing error and programming complexity.

Read draft and comment

Comment on proposal

Required form fields are indicated by an asterisk (*) character.

Discard

Please email further comments to: admin.start@bsigroup.com

Follow standard

You are now following this standard. Weekly digest emails will be sent to update you on the following activities:

You can manage your follow preferences from your Account. Please check your mailbox junk folder if you don't receive the weekly email.

Unfollow standard

You have successfully unsubscribed from weekly updates for this standard.

Error