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BS EN IEC 62047-63 BS EN 62047-63 ED1 Semiconductor devices - Micro-electromechanical systems. Part 63: Tensile test method for shape-memory characteristics of MEMS materials under thermomechanical loading

Source:
IEC
Committee:
EPL/47 - Semiconductors
Categories:
Semiconductor devices. Other
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Scope

This part of IEC 62047 specifies a test method for evaluating the shape-memory performance of MEMS materials under combined mechanical loading and temperature variation. The evaluated parameters include strain fixity ratio, strain recovery ratio, recovery time, and the strain recovery cycle[1]. These parameters can be used to assess and compare the performance of various shape-memory MEMS devices depending on their intended applications. Typical shape-memory MEMS materials include metallic alloys and polymeric materials exhibiting phase transformation behavior at device operating temperatures. The test piece is dogbone-shaped with a thickness ranging from 10 µm to 1 mm, corresponding to that of actual devices. As the shape-memory effect of these materials is activated by controlled temperature profile, the test shall be performed under combined thermomechanical loading conditions. As the shape-memory effect of these materials is activated by a controlled temperature profile, the test shall be performed under combined thermomechanical loading conditions. This document complements existing standards on bulk shape-memory alloys (ASTM E3097-23 [2], ASTM E3098-24 [3], ASTM E3506-25 [4]) by addressing MEMS-scale test pieces and by providing performance parameters representative of MEMS device operation under combined thermomechanical loading.

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