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This standard specifies a process profile design method used for setting power profile in laser assisted bonding (LAB). This method is applicable to many areas such as LED bonding, solar cell bonding, flip chip bonding, and hermetic sealing of MEMS components.
The process is based on the principle that when a laser is irradiated to a device, some of it is absorbed in the form of heat energy, and the temperature of the joint increases to the melting point due to heat conduction.
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