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BS EN 62047-55 Ed.1.0 Micro-electromechanical devices. Part 55: Silicon based MEMS fabrication technology - Test method of microstructure pendulum impact

Source:
IEC
Committee:
EPL/47 - Semiconductors
Categories:
Components. Electric and electromechanical
Comment period start date:
Comment period end date:
Number of comments:
0

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Scope

This part of IEC 62047 specifies a pendulum impact test method to evaluate the impact resistance of microstructures fabricated by micromachining technology used in silicon-based micro-electromechanical systems (MEMS), in which a special designed on-wafer tester fabricated by same process with MEMS chip will overcome shortcomings of traditional testers, such as the inability creating a higher enough quotative impact energy to microstructure. and test the microstructures on wafer. In MEMS chip manufacturing, the mechanic property of microstructure is strongly related to fabrication process  compared to larger-scale production, which can lead to the occurrence of surface defects, line width loss, and residual stress in the fabricated objects, causing significant fluctuations in the mechanical strength of MEMS devices.

This document specifies an in-situ on-wafer test method to measure the actual impact resistance energy values of the microstructures during MEMS devices fabrication. This method eliminates the requirement for intricate instruments like scanning probe microscopy and nanoindenter, and needn’t extra test specimens. This document typically applies for cantilever beams testing with a width range of 3μm to 20 μm and a length range of 60μm to 250 μm..

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