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This document specifies the quantification and test methods for the selectivity of area selective atomic layer deposition (ASALD). It covers the specifications of selectivity, including growth area (GA), nongrowth area (NGA), selective window, nucleation delay, and lateral broadening.
This document is applicable to manufacturers, researchers, and regulatory bodies involved in the development and production of area selective atomic layer deposition. More specifically, this encompasses the practical application and concurrent research investigations of selective atomic layer deposition across diverse fields, such as microelectronics and nanodevice manufacturing, energy storage, catalyst design, optoelectronic devices, sensor technology, and barrier film preparation. These scenarios may require the specification and test methods presented in this document. It ensures consistent and precisely measurement and quantification of selective atomic layer deposition.
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