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BS EN IEC 62047-51 ED1 BS EN 62047-51 ED1 Semiconductor Devices - Micro-electromechanical Devices. micro-electromechanical devices

Source:
IEC
Committee:
EPL/47 - Semiconductors
Categories:
Semiconductor devices. Other
Comment period start date:
Comment period end date:
Number of comments:
0

Comment by:

Scope

This part of IEC 62047 specifies test method of electrical characteristics under two-directional cyclic bending deformation for flexible micro-electromechanical devices. These devices include MEMS on the flexible film or embedded in the flexible film. Fully reversed loading is intended for convex and concave deformation. The desired in-plane dimensions of the device for the test method ranges typically from 1 mm to 300 mm and the thickness ranges from 10 μm to 1 mm, but these are not limiting values. The test method is so designed as to understand and further visualize the entire performance deterioration behavior after cyclic bending deformation in a concept of 3-dimensional manner (ex.P-S-N: Performance - Severity of bending - Number of cycles, e.g. conductance – angular amplitude -number of loading cycles) such as a specific performance changing over the space of severity of bending and number of repeated cycles. This document is essential to estimate safety margin over the operation period under a certain level of cyclic bending deformation and indispensable for reliable design of the product employing these devices.

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