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This part of IEC 63550-4 specifies the test methods for evaluating the asymmetry of neuromorphic memristor devices. The test methods in this international standard also include test apparatus, terms, and definitions for evaluating the conductance update asymmetry in the neuromorphic memristor devices, including asymmetry, cycle-to-cycle variation of asymmetry and device-to-device variation of asymmetry. This document is applicable to neuromorphic two-teminal memristor devices without any limitations prone to device technology and size.
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