Standards Development
This part of IEC 63567-3 provides guidance on the use of optical inspection for detecting nano -scale defects on commercially available wafers using ultraviolet (UV) light. Additionally, this document describes wafer defects detected by UV inspection techniques and various other surface characterization methods.
Wafer surface inspection is a critical process in semiconductor manufacturing. Defect inspection is usually conducted to prevent reproducing defects that may occur on the wafer. As the integration density of semiconductors has been increased, even small de fects and contamination can cause major problems like reduced productivity problems. Therefore, the need to detect Nano -level defects, rather than micro-level defects, has increased. Thanks to recent development of wafer inspection techniques, even smaller defects can be detected by using UV light source and related optics.
This international standard establishes reliable measurement guidelines for inspection method by UV light. It covers measurement techniques, sample preparation, test report configuration, terminology, and apparatus system layout
You are now following this standard. Weekly digest emails will be sent to update you on the following activities:
You can manage your follow preferences from your Account. Please check your mailbox junk folder if you don't receive the weekly email.
You have successfully unsubscribed from weekly updates for this standard.
Comment on proposal
Required form fields are indicated by an asterisk (*) character.