Standards Development

Scope

This part of IEC 62607 establishes a standardized method to determine the key control characteristic

– capacitance

for nanoelectronic devices by

– scanning microwave microscopy (SMM).

The capacitance is derived using an atomic force microscope where a conductive sharp tip is connected to a vector network analyser (VNA). For traceable absolute values of the capacitance (i.e., making capacitance values traceable to the SI units), SMM calibration using a capacitance reference standard is required. Then, the capacitance can be determined from the scattering parameter S11 measured by VNA.

The method is applicable to characterize the electrical properties of semiconductor devices such as transistors, diodes, and capacitors, and to analyse their performance.

– In general, the method is suitable to characterize the electrical properties of all kinds of dielectric thin films

– Determination of the electric key control characteristics of materials are import ant for applications in electronics and communication technology. Typical materials are Si, Ge, III -V, and II-VI, as well as graphene, glasses, polymers, ceramics, and metals.

– Evaluation of nano-enabled electronic devices, such as graphene field effect t ransistors, and their potential applications in electronics and energy storage. This supports wafer -scale system integration, enabling the utilization of nanomaterials for advanced More -than-Moore applications.

– Typical specifications for using a SMM for capacitance measurements are:

– Scanning range: 60 μm in the x, y directions, 10 μm in the z -direction

– Spatial resolution: < 50 nm

– Frequency range: 1 GHz to 20 GHz

– Capacitance: 0.1 fF to 10 fF

Purpose

Scanning microwave microscopy (SMM) is a powerful nanoscale technique that merges the electrical measurement capabilities of a vector network analyzer (VNA) with the spatial resolution of an atomic force microscope (AFM). The conductive tip of the SMM is connected through a matching network to the microwave source of the VNA. While the tip scan over the surface of the sampl e, a fraction of the incident microwave signal from the VNA is reflected from the sample and extracted by the matching network so that it can be analyzed by the VNA. The ratio between the reflected and incident signals, the so -called S11 scattering parameter, is then measured as a function of frequency by the VNA and converted into complex impedance values. Therefore, electrical key control characteristics like capacitance, inductance and resistance for electronic structures and devices can directly be meas ured with nanoscale resolution. Using a suitable physical model, it is possible to access the intrinsic properties of the sample, such as permittivity (dielectric constant and loss tangent) and dopant density.

To obtain absolute values of the complex imped ance the sample-tip arrangement must be calibrated with the help of a well-known reference standard. Therefore, the reference standard is a key part of the measurement system.

SMM has multiple applications in the fields of electronics and material science . One of the key applications of SMMs is the characterization of semiconductor devices. SMMs are used to evaluate the electrical properties of devices such as transistors, diodes, and capacitors and to analyze their performance.

Another important application of SMMs is the study of material dielectric properties. By using SMMs, researchers can examine the permittivity and conductivity of various materials, which are crucial parameters for applications in electronics and communication technology. Materials t hat are commonly studied with SMMs include Si, Ge, III-V, and II-VI, as well as graphene, glasses, polymers, ceramics, and metals.

SMMs are also useful for the analysis of nanostructured materials, such as graphene field effect transistors. These devices have the potential to revolutionize electronics and energy storage, and SMMs allow researchers to study their properties and potential applications. In addition, the use of SMMs in the study of nanostructured materials supports the integration of the wafer -scale system and enables the effective utilization of nanomaterials for advanced More-than-Moore applications.

Overall, SMMs provide a unique and non-destructive way to probe electrical key control characteristics materials and devices at the nanoscale, an d they play a critical role in advancing the understanding of materials science and engineering and can support the optimization of industrial fabrication processes